* 21̀ A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,. ID = 9.7 A
* Low Gate Charge (Typ. 31 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* RoH.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts